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Implant Metrology for Bonded SOI Wafers Using a Surface Photo-voltage Technique
Adam Bertuch, Wesley Smith, Ken Steeples, Robert Standley, Anca Stefanescu and Ronald Johnson
Abstract
Small signal Surface Photo-voltage (SPV) measurement techniques have been applied to monitor ion implants typical of those used for layer-transfer SOI processes. This SPV wafer mapping technique was investigated for sensitivity to dose, implant uniformity, and repeatability for hydrogen and helium implants into (100) silicon wafers through a 1450Å surface oxide.
Understanding The Calibration Methodology For The Axcelis GSD/HE Final Energy Magnet And A Means For Manipulating The Calibration Curve
Ronald Johnson, John Schuur
Abstract
The ion energy delivered by the Axcelis GSD/HE ion implanter is determined by the setting of the Final Energy Magnet (FEM). A gauss probe situated between the FEM poles is used to measure magnetic field; this probe has high precision and repeatability, but does not measure absolute magnetic field. The location of the probe outside of the central field region leads to measurement non-linearity and to errors in actual field value.
Molybdenum Contamination of Indium, Antimony, Phosphorus Tetramer, and Decaborane Implants
Raymond Pong, and John Schuur
Abstract
Indium has been explored as a low diffusivity replacement for boron. Low solid solubilities make it unsuitable for the formation of shallow source drains and emitters. However, it remains viable for VT and Base implants. Multiuse implanters will continue to use BF3 as a source material for the generation of 11B+ beams. Additionally, some users find the use of AsF5attractive.
Applications Note – NV10 Disks at INNOViON
Raymond Pong
Abstract
INNOViON is the premier supplier of ion implantation foundry services. A major segment of our business is providing high dose implantation for 2 inch through 6 inch wafers. Innovion supplies much of this market segment with its stable of Eaton/Axcelis NV-10 series of implanters. To meet the varied requirements of its customers’ applications, Innovion maintains an extensive inventory of disks for NV10 implanters. These disks provide a mix of features that promote the optimal implantation of our customers’ diverse processes, from thin/fragile wafers through those sensitive to sputtered metal. Innovion customers and our engineering staff work closely together to select the most appropriate disk to meet their needs. This Application Note highlights the design features associated with each disk.
Alumininum Contamination Reduction in 1980’s Vintage Ion Implanters
John Schuur, Innovion Chief Technical Officer (CTO), INNOViON Corp.
Abstract
Ion implanters manufactured in the 1980’s such as the Eaton NV10 series tools have been employed in an incredible number of semiconductor device manufacturing situations without regard for Aluminum contamination levels. For certain specific situations Aluminum contamination can not be allowed at the levels produced by these implanters as originally designed. Silicon coating methodologies were adapted from the more modern generations of high current ion implanters with only moderate success. Results from a more aggressive contamination control program targeting Aluminum contamination levels substantially lower than can be achieved simply by coating the process disk are presented. Factors limiting the effectiveness of partial solutions are discussed as are the degradation of performance with time. The results achievable by an aggressive solution targeted at the primary sources of Aluminum contamination other than the process disk are reported.
GSD Implanter Application to Mainstream CMOS Processes
John Schuur, Innovion Chief Technical Officer (CTO), INNOViON Corp.
Abstract
The arrival of Innovion’s new 150mm and 200mm EATON GSD implanters provides a number of options for advanced production and development processes. The capability to process medium-current and high-current implants in tools with state-of-the-art process cleanliness is a great step forward in off-site implant process capabilities.
Dose Reproducibility in Axcelis GSD Implanters Using Stabil-Ion Gauge
Ron C. Johnson, Randy Tysinger, INNOViON Corp.
Abstract
Long-term dose reproducibility and tool to tool dose matching in the Axcelis GSD end-station is critically dependent on process chamber pressure measurement and Pressure Compensation factor selection. Pressure Compensation factor (PCOMP) determination is well established. Pressure measurement in the GSD end-station depends on accurate, repeatable gauge capability: incorrect pressure measurements directly lead to dose errors. For example, the dose equation using PCOMP tells us that for a modest PCOMP value of 30%, a chamber pressure measurement error of 2E-5 torr can result in a dose error up to 6% at normal process pressures. The original HCIG used for pressure measurement was not capable of meeting the requirements for good dose control since gauge to gauge differences were not controlled and gauge accuracy was only on the order of 25%. Axcelis introduced the Granville- Phillips 360 Stabil-Ion gauge to improve dose reproducibility through much improved gauge to gauge matching (+/-6%) and more accurate gauge output. This paper discusses the details of the care and feeding of the Stabil-Ion gauge system and it’s impact on process dose and process trends.
Anomalous Peaks in Mass Spectra; Effects of Pre-Analysis Dissociation and Charge Exchange Events.
Ron C. Johnson, INNOViON Corp.
Abstract
It is common to find a considerable number of peaks in a mass spectrum that do not correspond to easily identifiable species (e.g., mass 10 and mass 80 peaks in Argon spectra). Dissociation of molecular ions and charge exchange events prior to mass analysis can account for many of these anomalies. This paper presents a general method for calculating the expected, apparent masses of these ions.
Monitoring of Ion Implanters Using Multiple Dopants
Ray Pong, John Schuur, Ron Johnson , INNOViON Corp.
Abstract
A methodology for the monitoring and charting of the monitor results using multiple species on a single chart id demonstrated. The technique utilizes the concept of sensitivity in the correlation of the different species and the associated uniformities. The methodology permits the charting of the data in Equivalent Dose values or in Equivalent Boron Resistivity values. Resistivity and sensitivity data for boron, arsenic, and phosphorus is presented from 1e14 to 1e16. Sensitivity is demonstrated to be the slope of the Resistivity/Dose curve on a log log graph.
Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra Shallow Junction Characterization
Ronald Eddy, David A. Walker, INNOViON Corp.
Abstract
The application of micro four-point probe technique in ion implantation non-uniformity mapping and analysis is demonstrated in this work. The technique uses micron-size probes with electrode pitch of 10 µm to achieve greatly enhanced spatial resolution of sheet resistance (Rs) measurements. Rs non-uniformities due to uneven dopant distribution or activation can be mapped with improved accuracy, making it easier to detect implanter scanning problems, dose and charge control malfunctions and annealer related non-uniformities. The technique’s superior performance in spatial resolution over conventional four-point probe measurements is demonstrated by zero edge exclusion sheet resistance measurements at the wafer edge. In addition, the technique is used to investigate potential Rs variations between equivalent As+ and As2+ implants with the same effective energy. Finally, repeatability and reproducibility are investigated by making multiple measurements on a selected ULE implanted and annealed wafer.
Correlation Of Beam Transport Characteristics And Mass Resolving Power To Analyzing Magnet Pole Piece Wear In Axcelis HE Ion Implanters
Ron Johnson, John Schuur, INNOViON Corp.
Abstract
An investigation into odd analyzing magnet tuning behavior on an Axcelis HE ion implanter revealed a correlation to excessive wear on the analyzer magnet pole pieces. Though the lifetime is generally quite good, the pole pieces are internal to the beamline design and are exposed to and sputtered by the ion beam during mass analysis. This erosion of the pole piece surfaces affects beam focus and transport, especially for lower current ion beams. Eventually, automatic beam set-up fails altogether as the system is unable to locate the correct amu peak. It is important to understand and correct any deficiencies in pole piece condition as long-term neglect will eventually lead to process errors. Data is presented to illustrate good and bad pole piece condition and a method is suggested for non-invasive testing.
Characterization Of A Small Form Factor Multipole RGA For Process Chamber Monitoring And For Reduction In Time To Complete Routine Preventive Maintenance
Ron Johnson, Brannon Winningham and John Schuur, INNOViON Corp.
Abstract
A small form-factor, multipole Residual Gas Analyzer (RGA) has been used to study steady state and post-PM conditions in an Axcelis GSD ion implanter. The RGA properties and specifications are discussed and data is presented to illustrate N2, O2, and H2O pump-down curve characteristics. Baseline performance is compared to performance following invasive activities to determine applicability for eliminating explicit He leak checking requirements and for the determination of how quickly a machine may be returned to production. The target ion implanter was an Axcelis GSD/200E.
Correlation Of Measured Surface Contaminants As A Function Of Ion Beam Current In GSD Ion Implanters
Ron Johnson, Ron Eddy and John Schuur, INNOViON Corp.
Abstract
An investigation into measured differences in surface contaminant levels when evaluating several ion implant tools and/or tool types. For a given species and energy, beam current appears to have a strong effect on final contaminant levels. Ideally one evaluates process integrity at machine set-up conditions that approximate or exceed the worst case conditions required for regular, volume wafer production. Some contaminants may exhibit a ‘threshold’ effect where they are easily observed with sufficient beam current, but not present at all for lower beam currents. Knowing the characteristics of the measurement process is essential in obtaining reliable results with a clear interpretation and better facilitates cross-site or cross-platform comparisons.
Low Energy Proton Implantation Techniques For Coverglass Irradiation Qualification
S. R. Messenger, K. Trautz, R. J. Walters, G. Jones, J. Hall and J. Schuur,
US Naval Research Laboratory, Washington, DC, USA
Qioptiq Space Technology, Wales, UK
Innovion Corporation, San Jose, CA, USA
Abstract
It is demonstrated that the two hydrogen concentration profiles and the associated effects on solar cell coverglass degradation created at equivalent atomic fluences of 7.4×1015 particles/cm2 using 30 keV proton (H+) and 60 keV diatomic hydrogen ion (H2+) implantation on solar cell coverglass material are nearly identical. Both Monte Carlo simulation and experimental results support this contention to the level of acceptable experimental error, thereby enabling coverglass radiation testing to be performed using the latter, more cost effective option.
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